型号:

PMR370XN,115

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N-CH 30V 0.84A SOT416
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
PMR370XN,115 PDF
标准包装 1
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 840mA
开态Rds(最大)@ Id, Vgs @ 25° C 440 毫欧 @ 200mA,4.5V
Id 时的 Vgs(th)(最大) 1.5V @ 250µA
闸电荷(Qg) @ Vgs 0.65nC @ 4.5V
输入电容 (Ciss) @ Vds 37pF @ 25V
功率 - 最大 530mW
安装类型 表面贴装
封装/外壳 SC-75,SOT-416
供应商设备封装 SC-75
包装 标准包装
其它名称 568-6869-6
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